Monte Carlo simulation of irradiation-induced damage in 3C-SiC and 6H-SiC using JA-IPU Code

Ambika Tundwal 1, * and Vinod Kumar 2

1 Department of Applied Sciences, Guru Tegh Bahadur Institute of Technology, New Delhi, India.
2 University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi, India.
 
Research Article
International Journal of Science and Research Archive, 2024, 13(02), 2004–2014.
Article DOI: 10.30574/ijsra.2024.13.2.2382
Publication history: 
Received on 26 October 2024; revised on 02 December 2024; accepted on 05 December 2024
 
Abstract: 
The JA-IPU code, employing the Monte Carlo technique, has been utilized to simulate damage induced in 3C-SiC and 6H-SiC. Recoils of silicon and carbon atoms, with energies ranging from 0.25 keV to 50 keV, have been imparted on these SiC polytypes. Displacement cascades have been generated up to eight generations, considering four distinct threshold energies for silicon-silicon, silicon-carbon, carbon-carbon, and carbon-silicon collisions. The results reveal that carbon interstitials and vacancies predominate over silicon interstitials and vacancies in both SiC polytypes. Additionally, damage production efficiency diminishes as the recoil energy of silicon and carbon increases. For 3C-SiC, the damage production efficiency was evaluated under two conditions: with the inclusion of electronic energy loss (EEL) and without EEL. The findings indicate that the efficiency is slightly higher in the absence of EEL.
 
Keywords: 
Monte Carlo technique; Threshold displacement energy; Primary knock-on atom 'PKA'; Displacement cascade; Damage production efficiency
 
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